VLSI Fabrication Principles 2/ed

VLSI Fabrication Principles 2/ed by Sorab K. Ghandhi is a comprehensive textbook covering the fundamental principles behind the fabrication of semiconductor devices and integrated circuits. The book, a second edition published in 1994, is a valuable resource for graduate students and practicing engineers in electrical engineering and related fields.
Key Focus and Content
The book’s main goal is to provide a broad body of knowledge on the fabrication of both silicon and gallium arsenide integrated circuits. While silicon is the dominant material in the industry, the book includes gallium arsenide to provide a wider perspective, as many of the principles and problems found in new silicon technologies are similar to those previously encountered in gallium arsenide fabrication.
The text covers the entire fabrication process, from the basic properties of materials and crystal growth to more complex processes, including:
• Diffusion: The process of introducing impurities (dopants) into a semiconductor material to change its electrical properties.
• Epitaxy: The growth of a crystalline layer on a crystalline substrate.
• Ion Implantation: A process used to introduce dopants into a semiconductor by accelerating ions into the material.
The book also emphasizes the fabrication criteria for specific types of circuits, such as CMOS (Complementary Metal-Oxide-Semiconductor), bipolar, MOS (Metal-Oxide-Semiconductor), and FET (Field-Effect Transistor) technologies. It introduces these diverse technologies separately before consolidating them into complete circuit examples. The book uses numerous illustrations and diagrams to explain the complex, step-by-step processes involved in fabricating these devices.